Influence of ion-induced interfacial chemical reactivity on contact resistance
Identifieur interne : 000112 ( Main/Exploration ); précédent : 000111; suivant : 000113Influence of ion-induced interfacial chemical reactivity on contact resistance
Auteurs : RBID : ISTEX:12034_1995_Article_BF02749659.pdfEnglish descriptors
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Abstract
Contact resistance measurements of chromium contacts deposited by partially ionized beam deposition on transparent conducting indium tin oxide (ITO) were performed. These provide a direct experimental evidence of the influence of interfacial chemical interaction on the contact resistance. The interfacial reactivity is controlled by modifying the energy and flux of ionized chromium atoms deposited on ITO employing a specially designed partially ionized deposition system with very high ionization efficiency. The true contact resistivityρc is obtained by iteratively correcting the experimentally measured values for the finite sheet resistance of the ITO layer.ρc decreases linearly with the energy of the ionized chromium. Auger sputter profiling shows no structural modifications at the interface due to a change in the energy of the chromium atoms, confirming that the observed change in the contact resistivity is directly related to interfacial chemical bonding of the atoms with the oxygen atoms in the ITO leading to a local increase of carrier concentration and lower interfacial resistance.
DOI: 10.1007/BF02749659
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These provide a direct experimental evidence of the influence of interfacial chemical interaction on the contact resistance. The interfacial reactivity is controlled by modifying the energy and flux of ionized chromium atoms deposited on ITO employing a specially designed partially ionized deposition system with very high ionization efficiency. The true contact resistivityρc is obtained by iteratively correcting the experimentally measured values for the finite sheet resistance of the ITO layer.ρc decreases linearly with the energy of the ionized chromium. Auger sputter profiling shows no structural modifications at the interface due to a change in the energy of the chromium atoms, confirming that the observed change in the contact resistivity is directly related to interfacial chemical bonding of the atoms with the oxygen atoms in the ITO leading to a local increase of carrier concentration and lower interfacial resistance.</div></front></TEI><mods xsi:schemaLocation="http://www.loc.gov/mods/v3 file:///applis/istex/home/loadistex/home/etc/xsd/mods.xsd" version="3.4" istexId="9b90c4fc362e8141a65bc66533b1f21bf06af3f9"><titleInfo lang="eng"><title>Influence of ion-induced interfacial chemical reactivity on contact resistance</title></titleInfo><name type="personal"><namePart type="given">S T</namePart><namePart type="family">Lakshmikumar</namePart><role><roleTerm type="text">author</roleTerm></role><affiliation>National Physical Laboratory, Dr K S Krishnan Road, 110 012, New Delhi, India</affiliation></name><typeOfResource>text</typeOfResource><genre>Original Paper</genre><originInfo><publisher>Springer India, New Delhi</publisher><dateCreated encoding="w3cdtf">1994-12-05</dateCreated><dateValid encoding="w3cdtf">2007-11-12</dateValid><copyrightDate encoding="w3cdtf">1995</copyrightDate></originInfo><language><languageTerm type="code" authority="iso639-2b">eng</languageTerm></language><physicalDescription><internetMediaType>text/html</internetMediaType></physicalDescription><abstract lang="eng">Contact resistance measurements of chromium contacts deposited by partially ionized beam deposition on transparent conducting indium tin oxide (ITO) were performed. These provide a direct experimental evidence of the influence of interfacial chemical interaction on the contact resistance. The interfacial reactivity is controlled by modifying the energy and flux of ionized chromium atoms deposited on ITO employing a specially designed partially ionized deposition system with very high ionization efficiency. The true contact resistivityρc is obtained by iteratively correcting the experimentally measured values for the finite sheet resistance of the ITO layer.ρc decreases linearly with the energy of the ionized chromium. Auger sputter profiling shows no structural modifications at the interface due to a change in the energy of the chromium atoms, confirming that the observed change in the contact resistivity is directly related to interfacial chemical bonding of the atoms with the oxygen atoms in the ITO leading to a local increase of carrier concentration and lower interfacial resistance.</abstract><subject lang="eng"><genre>Keywords</genre><topic>Chromium contacts</topic><topic>beam deposition</topic></subject><relatedItem type="series"><titleInfo type="abbreviated"><title>Bull. Mater. Sci.</title></titleInfo><titleInfo><title>Bulletin of Materials Science</title><partNumber>Year: 1995</partNumber><partNumber>Volume: 18</partNumber><partNumber>Number: 3</partNumber></titleInfo><genre>Archive Journal</genre><originInfo><dateIssued encoding="w3cdtf">1995-06-01</dateIssued><copyrightDate encoding="w3cdtf">1995</copyrightDate></originInfo><subject usage="primary"><topic>Chemistry</topic><topic>Materials Science</topic><topic>Engineering, general</topic></subject><identifier type="issn">0250-4707</identifier><identifier type="issn">Electronic: 0973-7669</identifier><identifier type="matrixNumber">12034</identifier><identifier type="local">IssueArticleCount: 14</identifier><recordInfo><recordOrigin>Indian Academy of Sciences, 1995</recordOrigin></recordInfo></relatedItem><identifier type="doi">10.1007/BF02749659</identifier><identifier type="matrixNumber">Art4</identifier><identifier type="local">BF02749659</identifier><accessCondition type="use and reproduction">MetadataGrant: OpenAccess</accessCondition><accessCondition type="use and reproduction">AbstractGrant: OpenAccess</accessCondition><accessCondition type="restriction on access">BodyPDFGrant: Restricted</accessCondition><accessCondition type="restriction on access">BodyHTMLGrant: Restricted</accessCondition><accessCondition type="restriction on access">BibliographyGrant: Restricted</accessCondition><accessCondition type="restriction on access">ESMGrant: Restricted</accessCondition><part><extent unit="pages"><start>223</start><end>228</end></extent></part><recordInfo><recordOrigin>the Indian Academy of Sciences, 1995</recordOrigin><recordIdentifier>12034_1995_Article_BF02749659.pdf</recordIdentifier></recordInfo></mods></record>Pour manipuler ce document sous Unix (Dilib)
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